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3N170 N-Ch Enhancement MOSFET
3N170 N channel Enhancement MOSFET transistor. V(BR)DSS (V) 25. V(BR)GSS (V) 35. I(D) Max. (A) 30m. Absolute Max. Power Diss. (W) 800m. Maximum Operating Temp (C) 200. I(GSS) Max. (A) 10p. r(DS)on Max. (Ohms) 200. C(iss) Max. (F) 5.0p. t(r) Max. (s) Rise time 10n. t(f) Max. (s) Fall time. 15n. Package Style TO-72.
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