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3N174 MOSFET P-Ch Enhancement transistor
3N174 P-channel Enhancement MOSFET transistor. V(BR)DSS (V) 30. V(BR)GSS (V) 30. I(D) Max. (A) 20m. Absolute Max. Power Diss. (W) 360m. Maximum Operating Temp (C) 200. I(GSS) Max. (A) 2.5p. r(DS)on Max. (Ohms) 1.0k. g(fs) Min. (S) Trans. conduct. 400u. @V(DS) (V) (Test Condition) 15. C(iss) Max. (F) 4.0p. (r) Max. (s) Rise time 50n. t(f) Max. (s) Fall time. 100n.
Package Style TO-72.
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